Nitride semiconductor light emitting device

ABSTRACT

The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

CLAIM OF PRIORITY

This application claims the benefit of Korean Patent Application No.2005-72963 filed on Aug. 9, 2005, in the Korean Intellectual PropertyOffice, the disclosure of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a nitride semiconductor light emittingdevice, and more particularly, to a nitride semiconductor light emittingdevice having an electrode structure that facilitates uniform currentspreading.

2. Description of the Related Art

In general, a nitride semiconductor is a group III-V semiconductorcrystal such as GaN, InN and AlN, and especially used widely as a lightemitting device capable of generating a single wavelength light(ultraviolet rays or green light), and particularly, blue light. Such anitride light emitting device is manufactured using an insulationsubstrate such as a sapphire substrate or a SiC substrate that satisfieslattice matching conditions for crystal growth. Thus, the nitride lightemitting device typically has a planar structure in which two electrodesconnected respectively to p- and n-nitride semiconductor layers aredisposed substantially horizontally on an upper surface of a lightemitting structure.

In comparison with a vertical-structure light emitting device in whichtwo electrodes are respectively disposed on upper and lower surfaces ofa light emitting structure, such a planar-structure nitride lightemitting device cannot uniformly spread current in the entire lightemission area thereof, thus having a not-so-large effective area forlight emission and low light emission efficiency per light emissionarea. Such a problem of non-uniform current spreading is more serious ina larger light emitting device for illumination purpose which requireshigh output.

As a solution for the problem of current spreading, the electrodestructure is extended in the entire area of the device as in the case ofa nitride semiconductor light emitting device shown in FIGS. 1( a) and1(b).

Referring to FIG. 1( a) together with FIG. 1( b), there is shown anitride semiconductor light emitting device 10 in which a firstconductivity type nitride semiconductor layer 12, an active layer 14 anda second conductivity type nitride semiconductor layer 15 are depositedin their order on a substrate 11. A transparent electrode layer 16 mayadditionally be formed on the second conductivity type nitridesemiconductor layer 15 for an ohmic contact.

A portion of an upper surface of the nitride semiconductor lightemitting device, where a first electrode is to be formed and connectedto the first conducting nitride semiconductor device, is mesa-etched toexpose a corresponding portion of an upper surface of the firstconductivity type nitride semiconductor layer. Thus, the first andsecond electrodes 18 and 19 are formed respectively on the exposedportion of the first conductivity type nitride semiconductor layer andthe exposed portion of the second conductivity type nitridesemiconductor layer (More specifically, the transparent electrode layer16).

The first electrode 18 is composed of a first bonding pad 18 a and firstextension electrodes 18 b extended from the first bonding pad 18 a,whereas the second electrode 19 is composed of a second bonding pad 19 aand a second extension electrode 19 b extended from the second bondingpad 19 a. As shown in FIG. 1 a, the first and second bonding pads 18 aand 19 a are disposed at opposing ends of the device 10, respectively.The first extension electrodes 18 b are extended along opposinglongitudinal sides, toward the second bonding pad 19 a. The secondextension electrode 19 b is extended along a center of the device 10such that the first extension electrodes 18 b are positioned at theopposing sides about the second extension electrode 19 b at apredetermined interval. Thereby, the first and second electrodes 18 and19 can be disposed in a relatively regulated interval using the firstand second extension electrodes 18 b and 19 b.

However, as the first and second bonding pads 18 a and 19 a are formedin relatively large areas for wire bonding, it is almost impossible toform the first and second electrodes 18 and 19 at a perfectly regulatedinterval. For example, as shown in FIG. 1, even if the first and secondextension electrodes 18 b and 19 b are disposed at a predeterminedinterval d1 from each other, since the second bonding pad 19 a hasrelatively a large area, the interval d2 between the second bonding pad19 a and an adjacent portion of the first extension electrode 18 b isnarrower. In general, current flow tends to be concentrated in a regionof small resistance, and thus even if the interval is regulated usingthe extension electrodes, the current is concentrated in a regionadjacent to the large bonding pad, thus hindering uniform currentspreading.

Such a problem is more serious in a large light emitting device such asan LED for illumination purpose. And as stated above, it is hard toexpect increased light emission efficiency with increased area of thedevice.

SUMMARY OF THE INVENTION

The present invention has been made to solve the foregoing problems ofthe prior art and therefore an object of certain embodiments of thepresent invention is to provide a nitride semiconductor device whichinsulates bonding pad regions from a light emitting structure and useselectrodes extended from the bonding pads to thereby allow uniformcurrent spreading.

According to an aspect of the invention for realizing the object, thereis provided a nitride semiconductor light emitting device, whichincludes a first conductivity type nitride semiconductor layer, anactive, layer and a second conductivity semiconductor layer deposited intheir order on a substrate, including: a first insulation layer and asecond insulation layer formed on different portions of an upper surfaceof the nitride light semiconductor emitting device; a first bonding padformed on the first insulation layer; a second bonding pad formed on thesecond insulation layer; a first extension electrode extended from thefirst bonding pad and connected to the first conductivity semiconductorlayer; and a second extension electrode extended from the second bondingpad and connected to the second conductivity semiconductor layer.

Preferably, the first and second extension electrodes are disposed inparallel with and in a predetermined interval from each other. In thiscase, the first and second extension electrodes may be disposedrespectively on portions adjacent to opposing sides of the lightemitting device. Alternatively, the first and second extensionelectrodes may be provided in a plural number, and disposed alternatelyin parallel with each other. Specifically, one of the first and secondextension electrodes may be provided in a pair, and the pair ofextension electrodes may be disposed in parallel with each other atopposing sides about the remaining one extension electrode.

The first and second insulation layers which define formation areas ofthe first and second bonding pads, can be formed at various locations.For example, the first and second insulation layers may be formed onupper surface portions of the first conductivity type nitridesemiconductor layer exposed by removing corresponding portions of thesecond conductivity type nitride semiconductor layer and the activelayer. Alternatively, one of the first and second insulation layers maybe formed on an upper surface portion of the first conductivity typenitride semiconductor layer exposed by removing a corresponding portionof the second conductivity type nitride semiconductor layer and theactive layer, and the other one of the first and second insulationlayers is formed on an upper surface portion of the second conductivitytype nitride semiconductor layer. Further, both the first and secondinsulation layers may be formed on upper surface portions of the secondconductivity type nitride semiconductor layer.

Preferably, the first and second insulation layers are formedsymmetrically about a center of an upper surface of the semiconductorlight emitting device, thereby easily disposing the first and secondextension electrodes extended from the first and second bonding pads ina symmetrical structure with a predetermined interval therebetween.

In this case, the first and second insulation layers may be formed onportions adjacent to a pair of opposing sides of the semiconductor lightemitting device, thereby advantageously ensuring a sufficient effectivelight emission area. Preferably, the first and second extensionelectrodes are extended in parallel with and in a predetermined intervalfrom each other.

In addition, at least one of the first and second extension electrodesmay be terminated with a portion opposed, in a thickness direction ofthe light emitting device, to a bonding pad of different polarity, andthe other one of the extension electrodes may be extended from a portionadjoining the bonding pad of different polarity.

In an embodiment of the present invention, the nitride semiconductorlight emitting device comprises a parallelepiped structure. In thisstructure, the pair of opposing sides, which the first and secondinsulation layers are formed adjacent to, may have a length shorter thanthat of a second pair of opposing sides. In this case, it is preferablethat the first and second extension electrodes are formed respectivelyalong the second pair of opposing sides.

In another embodiment of the present invention, the nitridesemiconductor light emitting device comprises a parallelepipedstructure. In this structure, the pair of opposing sides, which thefirst and second insulation layers are formed adjacent to, may have alength longer than that of a second pair of opposing sides. In thiscase, both the first and second insulation layers may be formed in acentral portion of the second pair of opposing sides.

Also in this embodiment of the present invention, it is preferable thatthe first and second extension electrodes are extended along the pair ofopposing sides which the first and second insulation layers are formedadjacent to. In this case, each of the first and second extensionelectrodes may include two extension parts extended in oppositedirections along the pair of opposing sides which the first and secondinsulation layers are formed adjacent to.

Preferably, the nitride semiconductor light emitting device according tothe present invention may further include a transparent electrode layerformed on the second conductivity type nitride semiconductor layer,thereby further enhancing uniform current spreading effects in theentire area of the device.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 illustrates a conventional nitride semiconductor light emittingdevice in which (a) is a plan view of an upper part thereof and (b) is aside sectional view;

FIG. 2 illustrates a nitride semiconductor light emitting deviceaccording to the present invention in which (a) is a perspective viewand (b) is a plan view of an upper part thereof;

FIG. 3( a) is a side sectional view illustrating a nitride semiconductorlight emitting device according to another embodiment of the presentinvention, and FIG. 3( b) is a side sectional view illustrating anitride semiconductor light emitting device according to yet anotherembodiment of the present invention;

FIG. 4 illustrates a nitride semiconductor light emitting deviceaccording to further another embodiment of the present invention inwhich (a) is a perspective view and (b) is a plan view of an upper partthereof;

FIGS. 5( a) to 5(c) are plan views of upper parts of nitridesemiconductor light emitting devices according to further otherembodiments of the present invention;

FIG. 6 is a perspective view illustrating an upper part of a nitridesemiconductor light emitting device according to further anotherembodiment of the present invention; and

FIG. 7 is a plan view illustrating a nitride semiconductor lightemitting device according to further another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Preferred embodiments of the present invention will now be described indetail with reference to the accompanying drawings.

FIG. 2 illustrates a nitride semiconductor light emitting deviceaccording to an embodiment of the present invention in which (a) is aperspective view and (b) is a plan view of an upper part thereof.

Referring to FIG. 2( a), the parallepiped nitride semiconductor lightemitting device 20 includes a first conductivity type nitridesemiconductor layer 22, an active layer 24, a second conductivity typenitride semiconductor layer 25 deposited in their order on a substrate21.

A transparent electrode layer 26 may additionally be formed on thesecond conductivity type nitride semiconductor layer 25 for an ohmiccontact. The transparent electrode layer 26 may be made of a materialsuch as Indium Tin Oxide (ITO), and may additionally enhance currentspreading effects by providing a predetermined surface resistance in theentire light emission area of the device.

In this embodiment, a portion excluding the light emission area ismesa-etched to expose a corresponding portion of an upper surface of thefirst conductivity type nitride semiconductor layer 22. First and secondinsulation layers 27 a and 27 b are provided at opposing ends of theexposed first conductivity type nitride semiconductor layer 22,respectively. And first and second bonding pads 28 a and 29 a are formedon the first and second insulation layers 27 a and 27 b, respectively.The first and second extension electrodes 28 b and 29 b are extendedrespectively from the first and second bonding pads 28 a and 29 a andelectrically coupled respectively to the first and second conductivitytype nitride semiconductor layers 22 and 25. The second extensionelectrode 28 b, however, is formed directly on the transparent electrodelayer 26.

The first and second insulation layers 27 a and 27 b prevent the firstand second bonding pads 28 a and 29 b from directly coupling to thedevice 20 so that only the first and second insulation layers 27 a and27 b are directly coupled to and provide current to the light emittingdevice 20. Thus, the problem of current concentration in the vicinity ofthe bonding pads 28 a and 29 a is mitigated, ensuring uniform currentflow by the arrangement of the first and second extension electrodes 28b and 29 b.

In the parallelepiped light emitting structure shown in FIG. 2( b), thefirst and second bonding pads 28 a and 29 a are disposed respectively atopposing ends of the device 20. And the first and second extensionelectrodes 28 b and 29 b are extended from the first and second bondingpads 28 a and 29 a along opposing sides in a longitudinal direction. Inaddition, the first and second extension electrodes 28 b and 29 b aredisposed in parallel with each other at a predetermined interval d. Inthese electrode structures 28 and 29, the electrode region directlycoupled to the device 20 is limited to the first and second extensionelectrodes 28 b and 29 b, thus realizing an exact symmetrical structurethat ensures more uniform current flow.

This embodiment is exemplified by a parallelpiped light emitting devicebut the present invention may also be applied to various structures oflight emitting devices. Even a polygon-shaped light emitting structurecan be adopted to design an electrode structure in which the bonding padregions are prevented from directly coupling to the device by theinsulation layers and only the extension electrodes are used toeffectively ensure current spreading.

In addition, this embodiment is exemplified by forming the bonding padson mesa-etched surfaces, which however does not limit the presentinvention. As the bonding pads of the first and second electrodes areformed on the insulation layers, the bonding pads are not limited to beformed on the mesa-etched surfaces but can be formed on other regions.The bonding pad structures can be variously formed as illustrated inFIGS. 3( a) and (b).

The nitride light emitting device 30 shown in FIG. 3( a) includes afirst conductivity type nitride semiconductor layer 32, an active layer34 and a second conductivity type nitride semiconductor layer 35 formedin their order on a substrate 31, and a transparent electrode layer 36formed on the second nitride semiconductor layer 35.

In this embodiment, a first insulation layer 37 a is formed on an uppersurface region of an exposed portion of the first conductivity typenitride semiconductor layer 32, and the second insulation layer 37 b isdirectly formed on the transparent electrode layer 36. First and secondbonding pads 38 a and 39 a are formed respectively on the first andsecond insulation layers 37 a and 37 b.

In this structure, the first and second extension electrodes (not shown)extended respectively from the first and second bonding pads 38 a and 39b have to be coupled respectively to the first and second conductivitytype nitride semiconductor layers 32 and 35 (The second extensionelectrode is actually coupled to the transparent electrode layer 36 inthis embodiment). Therefore, the first and second extension electrodes(not shown) can be advantageously formed without a big height differencefrom the first and second bonding pads 38 a and 39 a.

The nitride light emitting device 40 shown in FIG. 3( b) includes afirst conductivity type nitride semiconductor layer 42, an active layer44 and a second conductivity type nitride semiconductor layer 45 formedin their order on a substrate 41, and a transparent electrode layer 45formed on the second conductivity nitride layer 45.

In this embodiment, first and second insulation layers 47 a and 47 b aredirectly formed on the transparent electrode layer 46 which is notmesa-etched. And first and second bonding pads 48 a and 49 a are formedrespectively on the first and second insulation layers 47 a and 47 b.Typically, the first electrode structure, which is to be coupled to thefirst conductivity type nitride semiconductor layer 42, is formed on anexposed portion of first conductivity type nitride semiconductor layer42. However, as the bonding pads 48 a and 49 a adopted in the inventionare formed on the insulation layers 47 a and 47 b, and not directlycoupled to the device 40 via surface contact, both of the two bondingpads 48 a and 49 b can be disposed on the transparent electrode layer46. When there is no transparent electrode layer, they can be formed onthe second conductivity nitride layer 45.

Still in this structure, the first extension electrode (not shown)extended from the first bonding pad 48 a should be coupled to the firstconductivity type nitride semiconductor layer 42. Thus, a portion of thedevice where the first extension electrode is to be formed needs to bemesa-etched as shown in FIG. 2( a).

FIG. 4 illustrates a nitride semiconductor light emitting deviceaccording to another embodiment, in which (a) is a perspective view and(b) is a plan view of an upper part thereof. In this embodiment, thestructure is improved such that an effective light emission area alsoincludes a region of the device where the second bonding pad 59 a isformed.

Referring to FIG. 4( a), the parallelpiped nitride semiconductor lightemitting device 50 includes a first conductivity type nitridesemiconductor layer 52, an active layer 54 and a second conductivitytype nitride semiconductor layer 55 deposited in their order on asubstrate 51, similar to the device shown in FIG. 2( a). In addition, atransparent electrode layer 57 may be additionally formed on the secondconductivity type nitride semiconductor layer 55 for an ohmic contact.

In this embodiment, only a portion where the first bonding pad 58 a andthe first extension electrode 58 b are to be formed is selectivelymesa-etched to expose a corresponding portion of an upper surface of thefirst conductivity type nitride semiconductor layer 52. The first andsecond insulation layers 57 a and 57 b are provided on the exposed endportion of the first conductivity type nitride semiconductor layer 52and on an end portion of the transparent electrode layer 56.

First and second bonding pads 58 a and 59 a are formed respectively onthe first and second insulation layers 57 a and 57 b. The first andsecond extension electrodes 58 b and 59 b are extended respectively fromthe first and second bonding pads 58 a and 59 a, and electricallycoupled respectively to the first and second conductivity type nitridesemiconductor layers 52 and 55. (The second extension electrode 59 b,however, is formed directly on the transparent electrode layer 56.)

In this embodiment, as shown in FIG. 4( b), the first and secondextension electrodes 58 b and 59 b are extended along opposing sides ina longitudinal direction. In particular, the first extension electrode58 b is terminated with a portion thereof opposed, in a thicknessdirection of the light emitting device, to the second bonding pad 59 a.In addition, the second extension electrode 59 b is extended from a sideportion of the device which adjoins the second bonding pad 59 a and isopposed to the terminated portion of the first extension electrode 58 b.

With this arrangement of the extension electrodes, uniform current isensured even in the active layer region A located underneath the secondbonding pad 59 a, thus increasing a substantial effective light emissionarea. The second insulation layer 57 b and the second bonding pad 59 acan be formed in a limited size to facilitate light extraction from theextended active layer region A underneath the second bonding pad 59 a.

As described above, the locations of the insulation layers and thebonding pads according to the present invention can be varied. FIGS. 5(a) to 5(c) are plan views of upper parts of nitride semiconductor lightemitting devices according to various embodiments of the invention.

First, as shown in FIG. 5( a), the bonding pads can be formed on thefirst and second insulation layers 67 a and 67 b, symmetrically fromeach other about a center of the light emitting device 60. Inparticular, the bonding pads can be formed in corner regions to obtain arelatively larger overall light emission area defined by the activelayer (not shown). The first and second bonding pads 68 a and 69 a areformed on the first and second insulation layers 67 a and 67 b.

The first and second extension electrode 68 b and 69 b are extended fromcorners opposing each other about the center. The first extensionelectrode 68 b is terminated with a portion thereof opposed, in athickness direction of the device, to the second bonding pad 69 a. Thesecond extension electrode 69 b is terminated with a portion thereofopposed, in a thickness direction of the device, to the first bondingpad 68 a. This ensures uniform light emission in the entire area of thedevice.

In the embodiment shown in FIG. 5( a), the first and second bonding padscan be disposed sufficiently apart from each other, which canadvantageously facilitate a wire bonding process. In this embodiment,however, the locations of the bonding pads are not a critical factor forconsideration to obtain uniform current spreading, and thus can bechanged freely.

FIG. 5( b) is a structure in which both the first and second bondingpads 78 a and 79 a are formed at one end of the light emitting device70. In order for this, the insulation layer 76 is formed at the one end,and since unlike other embodiment, the first and second bonding pads 78a and 79 a are provided adjacent to each other, the insulation layer 76may be provided as a single one but may also be provided as two separateones.

In addition, a portion of the device where the first extension electrode78 b is to be formed is mesa-etched to expose a portion of an uppersurface of the first conductivity type nitride semiconductor layer 72.The first and second extension electrodes 78 b and 79 b are extendedalong opposing longitudinal sides adjoining the bonding pads, to thesides of the first and second bonding pads 78 a and 79 a, effectivelyincreasing an overall light emission area.

FIG. 5( c) presents a structure in which the first and second bondingpads 88 a and 89 a are disposed in a central portion of opposinglongitudinal sides of the light emitting device 80. In order for this,the insulation layer 87 is formed at a central portion of the device,and similar to aforedescribed embodiment, the first and second bondingpads 88 a and 89 a can be provided adjacent to each other. In thisembodiment, in case of a parallelepiped structure of the device, it ispreferable that the bonding pads (insulation layers) are located at arelatively longer pair of sides.

In addition, a portion where the first extension electrode 88 b is to beformed is mesa-etched to expose a corresponding portion of an uppersurface of the first conductivity type nitride semiconductor layer 82.The first and second extension electrodes 88 b and 89 b are extendedalong a pair of the sides adjoining the bonding pads 88 a and 89 a,effectively increasing an overall light emission area. Alternatively,each of the first and second extension electrodes 88 b and 89 b may becomposed of two extension parts extended respectively from the first andsecond bonding pads 88 a and 89 a in opposite directions.

The invention in the above described embodiments is exemplified byelectrode structures each having one extension electrode, but may alsoinclude a structure in which the first or second extension electrodeincludes a plurality of extension electrodes.

FIG. 6 illustrates a first conductivity type nitride semiconductor layer92, an active layer 94 and a second conductivity type nitridesemiconductor layer 95 are deposited in their order on a substrate 91,similar to the device in FIG. 4( a). First and second transparentelectrode layers 96 a and 96 b may additionally be formed on the secondconductivity type nitride semiconductor layer 95 for an ohmic contact.The transparent electrode layers 96 a and 96 b adopted in thisembodiment is dichotomized along the direction in which the pair ofsecond extension electrodes is extended.

In this embodiment, portions where the first bonding pad 98 a and thefirst extension electrode 98 b are to be formed are selectivelymesa-etched to expose corresponding upper surface portions of the firstconductivity type nitride semiconductor layer 92. The first and secondinsulation layers 97 a and 97 b are provided respectively on the exposedportion of the first conductivity type nitride semiconductor layer 92and on the first and second transparent electrode layers 96 a and 96 b.

The first and second bonding pads 98 a and 99 a are formed on the firstand second insulation layers 97 a and 97 b. The first extensionelectrode 98 b and the pair of second extension electrodes 99 b and 99 care extended respectively from the first and second bonding pads 98 aand 99 a and electrically connected respectively to the first and secondconductivity type nitride semiconductor layers 92 and 95. In thisembodiment, each of the pair of second extension electrodes 99 b and 99c is respectively formed along a side of each of the transparentelectrode layers 96 a and 96 b. It is of course preferable that each ofthe pair of second extension electrodes 99 b and 99 c is formed in aposition in each of the transparent electrode layer regions 96 a and 96b that is farthest apart from the first extension electrode 98 b.

As shown in FIG. 6, the pair of second extension electrodes 99 b and 99c are provided in parallel with the first extension electrode 98 b,effectively utilizing an overall area of a light emission part.Particularly, in a case where the transparent electrode layer regions 96a and 96 b having a similar resistance as a nitride are divided by thepair of second extension electrodes 99 b and 99 c, more uniform lightemission effects are expected from the entire area of the device.

The electrode structure according to the present invention may adopt astructure similar to a comb with a plurality of first and secondextension electrodes. As described in previous embodiments, the bondingpads are not directly coupled to the light emitting structure using theinsulation layers, and the first and second extension electrodes aredisposed in parallel with each other to achieve uniform currentspreading.

As an example, FIG. 7 illustrates a light emitting device in which apair of second extension electrodes is provided while there is a firstextension electrode provided singly.

As shown in FIG. 7, a pair of second extension electrodes 119 b and 119b′ is disposed at a pair of longitudinal sides opposed about the onefirst extension electrode 118 b. Each of the second extension electrodes119 b and 119 b′ is disposed in parallel with and at the same intervalfrom the first extension electrode 118 b to ensure uniform currentspreading. Each of the extension electrodes 118 b, 119 b and 119 b′ isextended from the first and second bonding pads 118 a and 119 a formedat opposing corners. The bonding pads 118 a and 119 a are prevented fromdirect coupling to the device 110 by the first and second insulationlayers 117 a and 117 b. Therefore, only the first and second extensionelectrodes 118 b, 119 b and 119 b′ disposed substantially symmetrically,are directly coupled to the first conductivity type nitridesemiconductor layer 112 and the transparent electrode layer 116, thusachieving uniform current spreading in the entire light emission part.

According to the present invention set forth above, insulation layersare provided in advance on locations where bonding pads are to beformed, thereby preventing direct coupling between the bonding pads anda light emitting device. Thus, only extension electrodes are used,without the assistance by the large bonding pads, to easily ensureregulated intervals between the electrodes, thereby achieving moreuniform current spreading in an overall area of a light emission part.

While the present invention has been shown and described in connectionwith the preferred embodiments, it will be apparent to those skilled inthe art that modifications and variations can be made without departingfrom the spirit and scope of the invention as defined by the appendedclaims.

1-20. (canceled)
 21. A nitride semiconductor light emitting device,which includes a first conductivity type nitride semiconductor layer, anactive layer and a second conductivity semiconductor layer deposited intheir order on a substrate, comprising: a first insulation layer and asecond insulation layer formed on different portions of an upper surfaceof the nitride light semiconductor emitting device; a first bonding padformed on the first insulation layer; a second bonding pad formed on thesecond insulation layer; a first extension electrode extended from thefirst bonding pad and connected to the first conductivity semiconductorlayer; and a second extension electrode extended from the second bondingpad and connected to the second conductivity semiconductor layer,wherein the first and second extension electrodes are disposed inparallel with and in a predetermined interval from each other.
 22. Thenitride semiconductor light emitting device according to claim 21,wherein the first and second extension electrodes have the same width.23. The nitride semiconductor light emitting device according to claim21, wherein the first and second extension electrodes are disposedrespectively on portions adjacent to opposing sides of the lightemitting device.
 24. The nitride semiconductor light emitting deviceaccording to claim 21, wherein the first and second extension electrodesare provided in a plural number, and disposed alternately in parallelwith each other.
 25. The nitride semiconductor light emitting deviceaccording to claim 21, wherein one of the first and second extensionelectrodes is provided in a pair, and the pair of extension electrodesare disposed in parallel with each other at opposing sides about theremaining one extension electrode.
 26. The nitride semiconductor lightemitting device according to claim 21, wherein the first and secondinsulation layers are formed on upper surface portions of the firstconductivity type nitride semiconductor layer exposed by removingcorresponding portions of the second conductivity type nitridesemiconductor layer and the active layer.
 27. The nitride semiconductorlight emitting device according to claim 21, wherein one of the firstand second insulation layers is formed on an upper surface portion ofthe first conductivity type nitride semiconductor layer exposed byremoving a corresponding portion of the second conductivity type nitridesemiconductor layer and the active layer, and the other one of the firstand second insulation layers is formed on an upper surface portion ofthe second conductivity type nitride semiconductor layer.
 28. Thenitride semiconductor light emitting device according to claim 21,wherein both the first and second insulation layers are formed on uppersurface portions of the second conductivity type nitride semiconductorlayer.
 29. The nitride semiconductor light emitting device according toclaim 21, wherein the first and second insulation layers are formedsymmetrically about a center of an upper surface of the semiconductorlight emitting device.
 30. The nitride semiconductor light emittingdevice according to claim 29, wherein the first and second insulationlayers are formed on portions adjacent to a pair of opposing sides ofthe semiconductor light emitting device.